Global Gallium Nitride (GaN) Semiconductor Device Market 2025- Samsung, Infineon, Qorvo, MACOM, Micr

Pune, Feb 17, 2019 ( – Global Gallium Nitride Semiconductor Device Industry to reach USD 29.19 billion by 2025.
Global Gallium Nitride (GaN) Semiconductor Device Industry valued approximately USD 17 billion in 2016 is anticipated to grow with a healthy growth rate of more than 6.19% over the forecast period 2017-2025. Increasing use of Laptops, TVs and mobile phones and other gadgets, growing need of low power consuming electronic appliances, demand for a radio frequency in power electronics, energy efficiency in consumer goods, rising use of an electric vehicle are the major factors which are driving the Global Gallium Nitride (GaN) Semiconductor Device Industry. The Gallium Nitrite is basically a semiconductor that is used in the manufacturing of light-emitting diodes (LEDs), power devices and high radio frequency devices. 

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A Gallium Nitride semiconductor has several benefits over silicon-based devices such as its operating temperature is very high, low resistance, high breakdown voltage and high-speed switching capacity that makes it a good alternative to silicon technology. With the use of Gallium Nitride, the production cost of integrated circuits has reduced. The GaN semiconductors are being used in transistors, amplifiers, diodes, switching systems, inverters and lighting industries. Moreover, the use of GaN semiconductors is growing in Defense, aerospace application and healthcare sector. The use of gallium nitride semiconductor devices are growing in various industries like consumer electronics, automotive, industrial and telecommunication and the rising use of an electric and hybrid vehicle are setting new prospects in the overall growth of the GaN semiconductors Industry. However, the overall manufacturing cost of GaN semiconductor is very high as compared to silicon-based semiconductor and it is a reason for obstruction of Global Gallium Nitride (GaN) Semiconductor Device Industry.

The regional analysis of Global Gallium Nitride (GaN) Semiconductor Device Industry is considered for the key regions such as Asia Pacific, North America, Europe, Latin America and Rest of the World. North America is the leading/significant region across the world in terms of Industry share. Whereas, owing to the countries such as China, Japan, and India, Asia Pacific region is anticipated to exhibit higher growth rate / CAGR over the forecast period 2018-2025.
The objective of the study is to define Industry sizes of different segments & countries in recent years and to forecast the values to the coming eight years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within each of the regions and countries involved in the study. Furthermore, the report also caters the detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the Industry. Additionally, the report shall also incorporate available opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players. 

Major market players in Gallium Nitride (GaN) Semiconductor Device Industry are Cree, Samsung, Infineon, Qorvo, MACOM, Microsemi Corporation, Analog Devices, Mitsubishi Electric, Efficient Power Conversion, GaN Systems, Exagan, VisIC Technologies, Integra Technologies, Transphorm, Navitas Semiconductor, Nichia, Panasonic, Texas Instruments, Ampleon, Sumitomo Electric, Northrop Grumman Corporation, Dialog Semiconductor, Epistar, RF Micro Devices Corporation, Osram Opto-semiconductors, Aixtron SE, Gallia Semiconductor, ROHM Company Limited and so on. 

Gallium Nitride (GaN) Semiconductor Device Industry Segmentation:
By Device Type:

By Wafer Size:
2 Inch
4 Inch
6 Inch and above

By Application:
Power Drives
Supply and Inverter
Lighting and Laser
IT & Telecommunication

By Vertical:

By Region:
North America
Rest of Europe
Rest of Asia-Pacific
Latin America
Middle East & Africa

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